The 3C N-type SiC has higher electron mobility (3C-SiC, 1100 cm2/V∙s; 4H-SiC, 900 cm2/V∙s), and because it has a smaller band gap, the device can have a smaller FN tunneling current and reliability in the preparation of the oxide layer, which can greatly improve the yield of the device product.

Crystal Type：4H/6H   Size：50.8±0.38 mm

Thickness：350±25μm   Micropipe Density：0 cm-2

Resistivity≤0.0006 Ω∙cm